| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.006 Ω |
| Polarity | P-Channel |
| Power Dissipation | 5 W |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 4250pF @10V(Vds) |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2700 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.55 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications.
● 100% Rg tested
● 100% UIS tested
● Halogen-free
● -55 to 150°C Operating temperature range
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