| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.006 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.7 W |
| Threshold Voltage | 600 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 18.6A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 4250pF @10V(Vds) |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2700 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
| Minimum Packing Quantity | 2500 |
The SI4463CDY-T1-GE3 is a 2.5VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for adaptor switch, high current load switch and notebook applications.
● 100% Rg tested
● 100% UIS tested
● Halogen-free
● -55 to 150°C Operating temperature range
VISHAY
9 Pages / 0.21 MByte
VISHAY
53 Pages / 1.48 MByte
Vishay Semiconductor
Trans MOSFET P-CH 20V 13.6A 8Pin SOIC N T/R
Vishay Intertechnology
Small Signal Field-Effect Transistor, 18.6A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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