| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SO |
| Drain to Source Resistance (on) (Rds) | 10.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.50 W |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
General Description
●This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
●Features
●• –11.5 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V
● RDS(ON) = 17.5 mΩ @ VGS = –2.5 V
●• Fast switching speed.
●• High performance trench technology for extremely low RDS(ON)
●• High power and current handling capability
●Applications
●• Power management
●• Load switch
●• Battery protection
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