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SI4464DY-T1-E3
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SI4464DY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SO-8
Description:MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.195Ω; ID 1.7A; SO-8; PD 1.5W; VGS +/-20V
Documentation:SI4464DY-T1-E3 Datasheet (9 Pages)
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SI4464DY-T1-E3 Datasheet PDF (9 Pages)
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SI4464DY-T1-E3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageSO-8
Drain to Source Resistance (on) (Rds)0.195 Ω
PolarityN-Channel
Power Dissipation2.5 W
Threshold Voltage2 V
Drain to Source Voltage (Vds)200 V
Breakdown Voltage (Drain to Source)200 V
Continuous Drain Current (Ids)1.70 A, 2.20 A
Rise Time12 ns
Fall Time15 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)1500 mW
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SI4464DY-T1-E3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Size-Length5 mm
Size-Width3.9 mm
Size-Height1.55 mm
Operating Temperature-55℃ ~ 150℃
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SI4464DY-T1-E3 Documents

SI4464DY-T1-E3 Datasheet
Vishay Semiconductor
9 Pages / 0.15 MByte
SI4464DY-T1-E3 Other Datasheet PDF
Vishay Semiconductor
9 Pages / 0.22 MByte

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