SI4465DY-T1-E3 Datasheet PDF - VISHAY

Manufacturer:	VISHAY
Category:	MOSFETs
Case Package:	SO
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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SI4465DY-T1-E3 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Case/Package	SO
Drain to Source Resistance (on) (Rds)	9.00 mΩ
Polarity	P-Channel
Power Dissipation	2.50 W
Breakdown Voltage (Gate to Source)	±8.00 V

TYPE	DESCRIPTION
Packaging	Tape & Reel (TR)

VISHAY

5 Pages / 0.07 MByte

Vishay Siliconix

P-Channel 1.8V (G-S) MOSFET

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