TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.044 Ω |
Polarity | N-Channel, P-Channel |
Power Dissipation | 2 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Continuous Drain Current (Ids) | 4.90 A |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.13 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.55 mm |
Operating Temperature | -55℃ ~ 150℃ |
The SI4532ADY-T1-E3 is a N/P-channel MOSFET housed in a surface-mount package.
● TrenchFET® power MOSFET
● 100% Rg tested
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