| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 18.5 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 800 mW |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 9.00 A |
| Rise Time | 12 ns |
| Input Power (Max) | 1.3 W |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.55 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 2500 |
The SI4800BDY-T1-E3 is a TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
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