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SI4800BDY-T1-GE3
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SI4800BDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SOIC-8
Description:Trans MOSFET N-CH 30V 6.5A 8Pin SOIC N T/R
Documentation:SI4800BDY-T1-GE3 Datasheet (9 Pages)Package Outline Dimension on6 Page7 Page
Part Numbering System on1 Page
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SI4800BDY-T1-GE3 Datasheet PDF (9 Pages)
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SI4800BDY-T1-GE3 Specifications

TYPEDESCRIPTION
Number of Pins8 Pin
Case/PackageSOIC-8
Drain to Source Resistance (on) (Rds)0.03 Ω
PolarityN-Channel
Power Dissipation1.3 W
Threshold Voltage25 V
Drain to Source Voltage (Vds)30 V
Continuous Drain Current (Ids)9.00 A
Rise Time12 ns
Fall Time14 ns
Operating Temperature (Max)150 ℃
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SI4800BDY-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 150℃
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SI4800BDY-T1-GE3 Documents

SI4800BDY-T1-GE3 Datasheet
Vishay Semiconductor
9 Pages / 0.24 MByte
SI4800BDY-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
8 Pages / 0.17 MByte

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