| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.014 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | -8.70 A |
| Input Capacitance (Ciss) | 1960pF @15V(Vds) |
| Input Power (Max) | 5.6 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 5.6 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.55 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 2500 |
The SI4835DDY-T1-GE3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
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