TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.068 Ω |
Polarity | N-Channel |
Power Dissipation | 1.5 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 150 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 3.70 A |
Rise Time | 10 ns |
Input Power (Max) | 1.5 W |
Fall Time | 17 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 2500 |
The SI4848DY-T1-E3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
● -55 to 150°C Operating temperature range
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