| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.068 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.5 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 3.70 A |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1500 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Height | 1.55 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The SI4848DY-T1-E3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
● -55 to 150°C Operating temperature range
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