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SI4892DY-T1-E3
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SI4892DY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SO-8
Description:MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.01Ω; ID 8.8A; SO-8; PD 1.6W; VGS +/-20V; -55d
Documentation:SI4892DY-T1-E3 Datasheet (5 Pages)Part Numbering System on1 Page
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SI4892DY-T1-E3 Datasheet PDF (5 Pages)
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SI4892DY-T1-E3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageSO-8
Drain to Source Resistance (on) (Rds)0.02 Ω
PolarityN-Channel
Power Dissipation1.6 W
Drain to Source Voltage (Vds)30 V
Breakdown Voltage (Drain to Source)30 V
Breakdown Voltage (Gate to Source)±20.0 V
Continuous Drain Current (Ids)8.80 A
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
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SI4892DY-T1-E3 Size & Package

TYPEDESCRIPTION
Size-Length5 mm
Size-Height1.55 mm
Operating Temperature-55℃ ~ 150℃
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SI4892DY-T1-E3 Documents

SI4892DY-T1-E3 Datasheet
Vishay Semiconductor
5 Pages / 0.08 MByte
SI4892DY-T1-E3 Other Datasheet PDF
Vishay Semiconductor
5 Pages / 0.08 MByte

SI4892DYT1 Documents

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SI4892DY-T1-E3 Datasheet PDF
Vishay Semiconductor
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SI4892DY-T1-E3 Datasheet PDF
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.01Ω; ID 8.8A; SO-8; PD 1.6W; VGS +/-20V; -55d
SI4892DY-T1-GE3 Datasheet PDF
Vishay Siliconix
MOSFET N-CH 30V 8.8A 8-SOIC
SI4892DY-T1-E3 Datasheet PDF
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SOIC N-CH 30V 8.8A
SI4892DY-T1-GE3 Datasheet PDF
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