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SI4936BDY-T1-E3
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SI4936BDY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SOIC-8
Description:Trans MOSFET N-CH 30V 5.9A 8Pin SOIC N T/R
Documentation:SI4936BDY-T1-E3 Datasheet (10 Pages)Package Outline Dimension on8 Page
Part Numbering System on1 Page
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SI4936BDY-T1-E3 Datasheet PDF (10 Pages)
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SI4936BDY-T1-E3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageSOIC-8
Drain to Source Resistance (on) (Rds)0.029 Ω
PolarityN-Channel, Dual N-Channel
Power Dissipation2 W
Threshold Voltage3 V
Input Capacitance530pF @15V
Drain to Source Voltage (Vds)30 V
Breakdown Voltage (Drain to Source)30 V
Continuous Drain Current (Ids)6.90 A
Thermal Resistance58℃/W (RθJA)
Input Capacitance (Ciss)530pF @15V(Vds)
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)2000 mW
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SI4936BDY-T1-E3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Size-Length5 mm
Size-Width4 mm
Size-Height1.55 mm
Operating Temperature-55℃ ~ 150℃
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SI4936BDY-T1-E3 Documents

SI4936BDY-T1-E3 Datasheet
Vishay Semiconductor
10 Pages / 0.24 MByte
SI4936BDY-T1-E3 Other Datasheet PDF
Vishay Semiconductor
10 Pages / 0.23 MByte

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