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SI4936BDY-T1-GE3
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SI4936BDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:SOIC
Description:Trans MOSFET N-CH 30V 5.9A 8Pin SOIC N T/R
Documentation:SI4936BDY-T1-GE3 Datasheet (10 Pages)Package Outline Dimension on7 Page8 Page
Part Numbering System on1 Page
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SI4936BDY-T1-GE3 Datasheet PDF (10 Pages)
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SI4936BDY-T1-GE3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageSOIC
Number of Positions8 Position
Drain to Source Resistance (on) (Rds)0.051 Ω
PolarityDual N-Channel
Power Dissipation2 W
Threshold Voltage3 V
Drain to Source Voltage (Vds)30 V
Continuous Drain Current (Ids)6.90 A
Operating Temperature (Max)150 ℃
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SI4936BDY-T1-GE3 Documents

SI4936BDY-T1-GE3 Datasheet
Vishay Semiconductor
10 Pages / 0.23 MByte
SI4936BDY-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
9 Pages / 0.16 MByte

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