| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 33 mΩ |
| Polarity | Dual N-Channel |
| Power Dissipation | 1.7 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 5A |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 325pF @15V(Vds) |
| Input Power (Max) | 2.3 W |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1700 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.55 mm |
| Operating Temperature | -55℃ ~ 150℃ |
| Minimum Packing Quantity | 2500 |
The SI4936CDY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for low current DC-to-DC conversion and notebook system power applications.
● Halogen-free
● TrenchFET® power MOSFET
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