| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 0.019 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 600 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 7.10 A |
| Rise Time | 40 ns |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.55 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●Features:
● Halogen-Free According to IEC 61249-2-21 Definition
● TrenchFET® Power MOSFET: 1.8 V Rated
● Ultra Low On-Resistance for Increased Battery Life
● New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
● Compliant to RoHS Directive 2002/95/EC
●Applications:
● Load/Power Switching in Portable Devices
Vishay Semiconductor
2 Pages / 0.04 MByte
Vishay Semiconductor
7 Pages / 0.16 MByte
Vishay Siliconix
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N T/R
VISHAY
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
Vishay Semiconductor
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
Vishay Siliconix
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
Vishay Siliconix
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N T/R
Vishay Semiconductor
Trans MOSFET N-CH 20V 7.1A 8Pin SOIC N T/R
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