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SI5403DC-T1-GE3
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SI5403DC-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:ChipFET-8
Description:MOSFET 30V 6A 6.3W 30mohm @ 10V
Documentation:SI5403DC-T1-GE3 Datasheet (11 Pages)Package Outline Dimension on7 Page8 Page
Part Numbering System on1 Page
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SI5403DC-T1-GE3 Datasheet PDF (11 Pages)
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SI5403DC-T1-GE3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins8 Pin
Case/PackageChipFET-8
Drain to Source Resistance (on) (Rds)0.025 Ω
PolarityP-Channel
Power Dissipation6.3 W
Drain to Source Voltage (Vds)-30.0 V
Continuous Drain Current (Ids)6.00 A
Rise Time140 ns
Input Capacitance (Ciss)1340pF @15V(Vds)
Fall Time18 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)2500 mW
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SI5403DC-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Size-Length3.05 mm
Size-Width1.65 mm
Size-Height1.1 mm
Operating Temperature-55℃ ~ 150℃
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SI5403DC-T1-GE3 Documents

SI5403DC-T1-GE3 Datasheet
Vishay Semiconductor
11 Pages / 0.21 MByte
SI5403DC-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
11 Pages / 0.21 MByte

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SI5403DC-T1-GE3 Datasheet PDF
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MOSFET 30V 6A 6.3W 30mohm @ 10V
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