TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 3.1 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.018 Ω |
Polarity | Dual N-Channel |
Power Dissipation | 3.1 W |
Threshold Voltage | 1.5 V |
Input Capacitance | 1200pF @10V |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20 V |
Continuous Drain Current (Ids) | 8.00 A |
Rise Time | 10.0 ns |
Thermal Resistance | 32℃/W (RθJA) |
Input Capacitance (Ciss) | 1200pF @10V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2000 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 3.9 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ |
The SI9926CDY-T1-E3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for DC-to-DC converter application.
● TrenchFET® power MOSFET
● 100% UIS tested
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