| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 3.1 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.018 Ω |
| Polarity | Dual N |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 8A |
| Input Capacitance (Ciss) | 1200pF @10V(Vds) |
| Input Power (Max) | 3.1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 2500 |
The SI9926CDY-T1-E3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for DC-to-DC converter application.
● TrenchFET® power MOSFET
● 100% UIS tested
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