TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.048 Ω |
Polarity | Dual P |
Power Dissipation | 2 W |
Threshold Voltage | 1.4 V |
Drain to Source Voltage (Vds) | 20 V |
Continuous Drain Current (Ids) | 4A |
Rise Time | 50 ns |
Input Capacitance (Ciss) | 665pF @10V(Vds) |
Fall Time | 13 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -50 ℃ |
Power Dissipation (Max) | 3.1 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Minimum Packing Quantity | 2500 |
The SI9933CDY-T1-E3 is a dual P-channel MOSFET housed in a surface-mount package. It is suitable for DC-to-DC converter and load switch applications.
● TrenchFET® power MOSFET
● 100% Rg and UIS tested
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