TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Drain to Source Resistance (on) (Rds) | 44.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 2.00 W |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 5.00 A |
Input Capacitance (Ciss) | 525pF @15V(Vds) |
Input Power (Max) | 900 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor"s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
●Features
●5.0 A, 30 V. RDS(ON) = 0.050 Ω @ VGS = 10 V
● RDS(ON) = 0.080 Ω @ VGS = 4.5 V
●Low gate charge.
●Fast switching speed.
●High power and current handling capability.
●Applications
●Battery switch
●Load switch
●Motor controls
Fairchild
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