| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 46 mΩ |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 3.1 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 4.3A |
| Input Capacitance (Ciss) | 665pF @15V(Vds) |
| Input Power (Max) | 3.1 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
| Minimum Packing Quantity | 2500 |
VISHAY
10 Pages / 0.26 MByte
VISHAY
10 Pages / 0.19 MByte
VISHAY
SOIC-8 Dual N 60V 4.3A 58mΩ
Vishay Siliconix
MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W
VISHAY
Transistor: N-MOSFET x2; unipolar; 60V; 5.3A; 3.1W; SO8
Vishay Semiconductor
MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W
Vishay Semiconductor
Transistor: N-MOSFET x2; unipolar; 60V; 5.3A; 3.1W; SO8
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