| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SO-8 |
| Number of Channels | 2 Channel |
| Drain to Source Resistance (on) (Rds) | 76 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2 W |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 3.30 A |
| Rise Time | 7.5 ns |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
General Description
●These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor"s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
●Features
●3.3 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V
● RDS(ON) = 0.200 Ω @ VGS = 4.5 V
●Low gate charge.
●Fast switching speed.
●High power and current handling capability.
●Applications
●Battery switch
●Load switch
●Motor controls
Fairchild
3 Pages / 0.18 MByte
Fairchild
3 Pages / 0.23 MByte
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