| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | DIE |
| Output Current | ≤200 A |
| Forward Voltage | 1.9V @200A |
| Polarity | Standard |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
Infineon
3 Pages / 0.36 MByte
Infineon
4 Pages / 0.05 MByte
Infineon
DIODE GEN PURP 600V 200A WAFER
Infineon
Rectifier Diode, 1 Phase, 1Element, 200A, 600V V(RRM), Silicon, 9.20 X 5.44MM, DIE-1
Infineon
Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
Infineon
Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
Infineon
Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
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