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SIDC50D60C8X1SA1
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SIDC50D60C8X1SA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Case Package:--
Description:Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
Documentation:SIDC50D60C8X1SA1 Datasheet (4 Pages)
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SIDC50D60C8X1SA1 Specifications

TYPEDESCRIPTION
Number of Pins2 Pin
Case/Package--
Forward Current (Max)200 A
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-40 ℃
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SIDC50D60C8X1SA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
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SIDC50D60C8X1SA1 Documents

SIDC50D60C8X1SA1 Datasheet
Infineon
4 Pages / 0.04 MByte

SIDC50D60C8X1 Documents

SIDC50D60C8X1SA1 Datasheet PDF
Infineon
Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
SIDC50D60C8X1SA2 Datasheet PDF
Infineon
Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
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