| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 313 W |
| Rise Time | 40 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 90 ns |
| Input Power (Max) | 313 W |
| Fall Time | 39 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 313 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 16.03 mm |
| Size-Width | 5.16 mm |
| Size-Height | 21.1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The SKW25N120 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode addressing soft switching/resonant and hard switching topologies. Eoff is 30% lower when compared to previous generation combined with low conduction losses. NPT technology offers very tight parameter distribution and temperature stable behaviour.
● Short circuit withstand time 10µs
● Designed for operation above 30kHz
● High ruggedness
● Parallel switching capability
Infineon
14 Pages / 0.46 MByte
Infineon
20 Pages / 2.6 MByte
Infineon
Trans IGBT Chip N-CH 1200V 46A 313000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 1200V 46A 313000mW 3Pin(3+Tab) TO-247 Tube
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