| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package | DO-214AA |
| Number of Circuits | 1 Circuit |
| Number of Positions | 2 Position |
| Power Dissipation | 600 W |
| Clamping Voltage | 32.5 V |
| Max Repetitive Reverse Voltage (Vrrm) | 15.3V |
| Test Current | 1 mA |
| Max Breakdown Voltage | 18.9 V |
| Peak Pulse Power | 600 W |
| Min Breakdown Voltage | 17.1 V |
| Reverse Breakdown Voltage | 17.1 V |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature | -55℃ ~ 150℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 4.6 mm |
| Size-Width | 3.95 mm |
| Size-Height | 2.45 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The Transil SM6T series TVS Diode designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015 and electrical overstress according to IEC 61000-4-4 and 5. It is generally used against surges below 600W (10/1000µs). Planar technology makes these devices suitable for high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time.
● 6.8 to 220V Breakdown voltage range
● Unidirectional and bidirectional types
● 515W (10/1000µs) High power capability at Tj max
● -55 to 150°C Operating junction temperature range
ST Microelectronics
2 Pages / 0.08 MByte
ST Microelectronics
14 Pages / 0.48 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
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