| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 600 mA |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 330 mW |
| Gain Bandwidth Product | 300 MHz |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 330 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 330 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | 150℃ (TJ) |
The SMBT 2222A E6327 is a NPN silicon switching Bipolar Transistor with low collector-emitter saturation voltage.
● 0.1 to 500mA High DC current gain
● SMBT2907AW (PNP) Complementary type
Infineon
8 Pages / 0.52 MByte
Infineon
34 Pages / 0.51 MByte
Infineon
34 Pages / 0.66 MByte
Infineon
6 Pages / 0.2 MByte
Infineon
1 Pages / 0.14 MByte
Infineon
INFINEON SMBT 2222A E6327 Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 330mW, 600mA, 100 hFE
Infineon
NPN TRANSISTOR 40V 0,6A SOT-23 **
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
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