| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 330 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 330 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 330 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | 150℃ (TJ) |
The SMBT 2907A E6327 is a PNP silicon switching Bipolar Transistor with low collector-emitter saturation voltage.
● 0.1 to 500mA High DC current gain
● SMBT2222A/MMBT2222A (NPN) complementary type
Infineon
9 Pages / 0.52 MByte
Infineon
34 Pages / 0.51 MByte
Infineon
34 Pages / 0.66 MByte
Infineon
1 Pages / 0.14 MByte
Infineon
INFINEON SMBT 2907A E6327 Bipolar (BJT) Single Transistor, PNP, 60V, 200MHz, 330mW, 600mA, 100 hFE
Infineon
PNP SCHALT-TRANS.60V 0,6A SOT23 **
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,
Infineon
Trans GP BJT PNP 60V 0.6A 3Pin SOT-23 T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
