TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 300 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 40.0 V |
Current Rating | 200 mA |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 330 mW |
Breakdown Voltage (Collector to Emitter) | 40 V |
Continuous Collector Current | 0.2A |
hFE Min | 100 @10mA, 1V |
Input Power (Max) | 330 mW |
DC Current Gain (hFE) | 100 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 330 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 1 mm |
Operating Temperature | 150℃ (TJ) |
The SMBT 3904 E6327 is a NPN silicon switching Bipolar Transistor with low collector-emitter saturation voltage.
● 0.1 to 100mA High DC current gain
● SMBT3906/MMBT3906 Complementary types
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