| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SC-70-6 |
| Number of Positions | 6 Position |
| Polarity | NPN, PNP |
| Power Dissipation | 150 mW |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 0.2A |
| hFE Min | 100 @10mA, 1V |
| Input Power (Max) | 150 mW |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
If your circuit"s specifications require a device that can handle high levels of voltage, ON Semiconductor"s npn and PNP SMBT3946DW1T1G general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6@NPN|5@PNP V.
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