TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 80.0 V |
Current Rating | 500 mA |
Case/Package | SOT-23-3 |
Polarity | NPN |
Power Dissipation | 330 mW |
Breakdown Voltage (Collector to Emitter) | 80 V |
Continuous Collector Current | 0.5A |
hFE Min | 100 @100mA, 1V |
Input Power (Max) | 330 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 330 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | End of Life |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.9 mm |
Operating Temperature | 150℃ (TJ) |
This specially engineered NPN SMBTA06E6433HTMA1 GP BJT from Infineon Technologies comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
Infineon
7 Pages / 0.51 MByte
Infineon
34 Pages / 0.51 MByte
Infineon
Trans GP BJT NPN 80V 0.5A 3Pin SOT-23 T/R
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