| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Polarity | NPN |
| Power Dissipation | 0.3 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 300 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The three terminals of this NPN SMMBT2222ALT3G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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