| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363 |
| Halogen Free Status | Halogen Free |
| Polarity | NPN |
| Power Dissipation | 0.385 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 35 @5mA, 10V |
| Input Power (Max) | 187 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 385 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
The NPN SMUN5211DW1T1G digital transistor from ON Semiconductor is your alternative to traditional BJTs in that it can provide digital signal processing power. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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