| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363 |
| Polarity | NPN+PNP |
| Power Dissipation | 0.385 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 80 @5mA, 10V |
| Input Power (Max) | 187 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 385 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT"s within? Look no further than the npn and PNP SMUN5314DW1T1G digital transistor from ON Semiconductor. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.
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