SN74CB3Q3306A-EP Datasheet PDF - TI

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

●The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

●This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

●To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

● High-Bandwidth Data Path (up to 500 MHz(1))

● 5-V-Tolerant I/Os With Device Powered Up or Powered Down

● Low and Flat ON-State Resistance (ron)

●Characteristics Over Operating Range (ron = 4 Ω Typ)

● Rail-to-Rail Switching on Data I/O Ports

● 0- to 5-V Switching With 3.3-V VCC

● 0- to 3.3-V Switching With 2.5-V VCC

● Bidirectional Data Flow With Near-Zero Propagation Delay

● Low Input/Output Capacitance Minimizes

●Loading and Signal Distortion

●(Cio(OFF) = 3.5 pF Typ)

● Fast Switching Frequency (f OE  = 20 MHz Max)

● Data and Control Inputs Provide Undershoot Clamp Diodes

● Low Power Consumption (ICC = 0.25 mA Typ)

● VCC Operating Range From 2.3 V to 3.6 V

● Data I/Os Support 0- to 5-V Signaling Levels

●(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)

● Control Inputs Can Be Driven by TTL or

●5-V/3.3-V CMOS Outputs

● Ioff Supports Partial-Power-Down Mode Operation

● Latch-Up Performance Exceeds 100 mA

●Per JESD 78, Class II

● ESD Performance Tested Per JESD 22

● 2000-V Human-Body Model (A114-B, Class II)

● 1000-V Charged-Device Model (C101)

● Supports Both Digital and Analog Applications: USB Interface,

●Differential Signal Interface, Bus Isolation, Low-Distortion

●Signal Gating

●## SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS

● Controlled Baseline

● One Assembly and Test Site

● One Fabrication Site

● Available in Military (–55°C to 125°C)

●Temperature Range

● Extended Product Life Cycle

● Extended Product-Change Notification

● Product Traceability

●(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, _CBT-C, CB3T, and CB3Q Signal-Switch Families_, literature number SCDA008.