TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 8 Pin |
Supply Voltage (DC) | 4.75V (min) |
Case/Package | DIP-8 |
Number of Outputs | 2 Output |
Output Voltage | 23.2 V |
Output Current | 500 mA |
Number of Positions | 8 Position |
Power Dissipation | 1000 mW |
Rise Time | 30 ns |
Drivers Per Package | 2 |
Output Current (Max) | 0.5 A |
Fall Time | 30 ns |
Fall Time (Max) | 30 ns |
Fall Time (Max) | 30 ns |
Operating Temperature (Max) | 70 ℃ |
Operating Temperature (Min) | 0 ℃ |
Power Dissipation (Max) | 1000 mW |
Supply Voltage | 4.75V ~ 24V |
Supply Voltage (Max) | 24 V |
Supply Voltage (Min) | 4.75 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | 0℃ ~ 70℃ |
The SN75372P is a dual NAND gate Interface Circuit designed to drive power MOSFETs from TTL inputs. It provides high current and voltage levels necessary to drive large capacitive loads at high speeds. The device operates from a VCC1 of 5V and a VCC2 of up to 24V.
● Dual circuits capable of driving high-capacitance loads at high speeds
● Low standby power dissipation
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