TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 650 V |
Current Rating | 15.0 A |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.25 Ω |
Polarity | N-Channel |
Power Dissipation | 34 W |
Threshold Voltage | 3 V |
Input Capacitance | 1.66 nF |
Gate Charge | 63.0 nC |
Drain to Source Voltage (Vds) | 650 V |
Breakdown Voltage (Drain to Source) | 600 V |
Continuous Drain Current (Ids) | 15.0 A |
Rise Time | 5 ns |
Input Capacitance (Ciss) | 1660pF @25V(Vds) |
Fall Time | 5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 34 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended |
Packaging | Tube |
Size-Length | 10.65 mm |
Size-Width | 4.85 mm |
Size-Height | 9.83 mm |
Operating Temperature | -55℃ ~ 150℃ |
Feature
●• New revolutionary high voltage technology
●•Ultra low gate charge
●• Periodic avalanche rated
●•Extreme dv/dt rated
●• Ultra low effective capacitances
●• Improved transconductance
●•P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Infineon
14 Pages / 0.69 MByte
Infineon
14 Pages / 0.62 MByte
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