| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 4.50 A |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 950 mΩ |
| Polarity | N-CH |
| Power Dissipation | 50 W |
| Input Capacitance | 580 pF |
| Gate Charge | 22.9 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 4.50 A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 580pF @25V(Vds) |
| Input Power (Max) | 50 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 50000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.4 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Infineon
11 Pages / 0.35 MByte
Siemens Semiconductor
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon
Cool MOS Power Transistor
Infineon
Cool MOS⢠Power Transistor Feature New revolutionary high voltage technology
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