| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 650 V |
| Current Rating | 11.0 A |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.34 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 125 W |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Infineon
18 Pages / 0.32 MByte
Infineon
14 Pages / 0.44 MByte
Infineon
1 Pages / 0.12 MByte
Siemens Semiconductor
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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