| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Polarity | N-CH |
| Power Dissipation | 125 W |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 11A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 1460pF @25V(Vds) |
| Input Power (Max) | 125 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Summary of Features:
● Innovative high voltage technology
● Worldwide best R DS(on) in TO-251 and TO-252
● Ultra low gate charge
● Periodic avalanche rated
● Extreme dv/dt rated
● Ultra low effective capacitances
● Improved transconductance
Infineon
11 Pages / 0.67 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
52 Pages / 3.25 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.12 MByte
Siemens Semiconductor
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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