| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 17.0 A |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.25 Ω |
| Polarity | N-Channel |
| Power Dissipation | 227 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 2300 pF |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Continuous Drain Current (Ids) | 17.0 A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 2300pF @100V(Vds) |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 227000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.4 mm |
The SPB17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications.
● New revolutionary high voltage technology
● Extreme dV/dt rated
● High peak current capability
● Qualified according to JEDEC for target applications
● Ultra low effective capacitance
● Low specific ON-state resistance
● Very low energy storage in output capacitance (Eoss)@400V
● Field proven CoolMOS™ quality
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CoolMOS® Power Transistor Features new revolutionary high voltage technology
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