| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -18.6 A |
| Case/Package | TO-263-3 |
| Power Rating | 81.1 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.101 Ω |
| Polarity | P-Channel |
| Power Dissipation | 81.1 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 860 pF |
| Gate Charge | 33.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 18.6 A |
| Rise Time | 5.8 ns |
| Input Capacitance (Ciss) | 690pF @25V(Vds) |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 80000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 9.25 mm |
The SPB18P06P G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
● Enhancement-mode
● Avalanche rated
● dV/dt Rated
● Halogen-free, Green device
● Qualified according to AEC-Q101
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