| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -80.0 A |
| Case/Package | TO-263-3 |
| Power Rating | 340 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.021 Ω |
| Polarity | P-Channel |
| Power Dissipation | 340 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 5.03 nF |
| Gate Charge | 173 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 18 ns |
| Input Capacitance (Ciss) | 4026pF @25V(Vds) |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 340 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.31 mm |
| Size-Width | 9.45 mm |
| Size-Height | 4.57 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The SPB80P06P G is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.
● Enhancement mode
● Avalanche rated
● dv/dt Rated
● AEC-Q101 qualified
Infineon
11 Pages / 0.59 MByte
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270 Pages / 11.59 MByte
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40 Pages / 0.46 MByte
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37 Pages / 2.01 MByte
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1 Pages / 0.13 MByte
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Trans MOSFET P-CH 60V 80A 3Pin(2+Tab) TO-263
Infineon
Trans MOSFET P-CH 60V 80A 3Pin(2+Tab) TO-263
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