| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 1.80 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2.7 Ω |
| Polarity | N-Channel |
| Power Dissipation | 25 W |
| Threshold Voltage | 4.5 V |
| Input Capacitance | 240 pF |
| Gate Charge | 9.50 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 1.80 A |
| Input Capacitance (Ciss) | 240pF @25V(Vds) |
| Input Power (Max) | 25 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Cut Tape (CT) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The SPD02N60S5 is a 600V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for general purpose applications.
● New revolutionary high voltage technology
● Extreme dV/dt rated
● Ultra low effective capacitance
● Qualified according to JEDEC for target applications
● Improved transconductance
● Innovative high voltage technology
● Worldwide best RDS (ON)
● Periodic avalanche rated
Infineon
11 Pages / 0.86 MByte
Infineon
11 Pages / 0.75 MByte
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