| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 650 V |
| Current Rating | 3.20 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.26 Ω |
| Polarity | N-Channel |
| Power Dissipation | 38 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 3.2A |
| Rise Time | 3 ns |
| Maximum Forward Voltage (Max) | 1.2 V |
| Input Capacitance (Ciss) | 400pF @25V(Vds) |
| Input Power (Max) | 38 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 38W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.223 mm |
| Size-Height | 2.413 mm |
| Operating Temperature | -55℃ ~ 150℃ |
N-Channel 600V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3-313
Infineon
13 Pages / 0.62 MByte
Infineon
16 Pages / 0.37 MByte
Infineon
1 Pages / 0.12 MByte
Siemens Semiconductor
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-252, 3 PIN
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