| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-252-3 |
| Power Rating | 63 W |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 1.1 Ω |
| Polarity | N-CH |
| Power Dissipation | 63 W |
| Threshold Voltage | 2.1 V |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Continuous Drain Current (Ids) | 4A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 570pF @25V(Vds) |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 63W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Summary of Features:
● Low specific on-state resistance
● (R on
●A)
● Very low energy storage in output capacitance (E oss) @400V
● Low gate charge (Q g)
● Fieldproven CoolMOS™ quality
● CoolMOS™ technology has been manufactured by Infineon since 1998
●Benefits:
● High efficiency and power density
● Outstanding cost/performance
● High reliability
● Ease-of-use
●Target Applications:
● Consumer
● PC power
● Adapter
● Lighting
● Solar
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CoolMOSTM Power Transistor Features New revolutionary high voltage technology
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