| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 42 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.23 Ω |
| Polarity | P-Channel |
| Power Dissipation | 42 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 335 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 8.83A |
| Rise Time | 46 ns |
| Input Capacitance (Ciss) | 420pF @25V(Vds) |
| Input Power (Max) | 42 W |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 42W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The SPD08P06P G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
● Enhancement-mode
● Avalanche rated
● Small signal packages approved to AEC Q101
● dV/dt Rated
● Qualified according to AEC-Q101
● Green device
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9 Pages / 0.58 MByte
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40 Pages / 0.46 MByte
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Trans MOSFET P-CH 60V 8.83A 3Pin(2+Tab) TO-252
Infineon
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3Pin
Siemens Semiconductor
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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