| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 42 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | P-Channel |
| Power Dissipation | 42 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Continuous Drain Current (Ids) | 9.7A |
| Rise Time | 168 ns |
| Input Capacitance (Ciss) | 360pF @25V(Vds) |
| Fall Time | 89 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 42000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
The SPD09P06PL G is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
● Enhancement-mode
● Avalanche rated
● Small signal packages approved to AEC Q101
● Logic level
● dV/dt Rated
● Qualified according to AEC-Q101
● Green device
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