| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 8.00 A |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.56 Ω |
| Polarity | N-Channel |
| Power Dissipation | 104 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 8.00 A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 1100pF @100V(Vds) |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 104 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.57 mm |
| Size-Height | 15.95 mm |
The SPP08N80C3 is a 800V CoolMOS™ N-channel enhancement-mode Power MOSFET features ultra low gate charge. It is designed for high DC bulk voltage and switching Applications.
● New revolutionary high voltage technology
● Extreme dV/dt rated
● High peak current capability
● Qualified according to JEDEC for target applications
● Ultra low effective capacitance
● Field proven CoolMOS™ quality
● High reliability
● Outstanding performance
● High efficiency and power density
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